一种新型单粒子翻转加固SRAM单元  

Innovative Single Event Upset Hardened SRAM Cell

作　　者：刘鸿瑾 李天文[1] 稂时楠 张建锋 刘群 袁大威 Liu Hongjin;Li Tianwen;Lang Shinan;Zhang Jianfeng;Liu Qun;Yuan Dawei(Beijing SunWise Space Technology Ltd.,Beijing 100190,China;Beijing Institute of Control Engineering (BICE),Beijing100190,China;The Faculty of Information Technology,Beijing University of Technology,Beijing 100124,China)

机构地区：[1]北京轩宇空间科技有限公司,北京100190 [2]北京控制工程研究所,北京100190 [3]北京工业大学信息学部,北京100124

出　　处：《半导体技术》2018年第12期941-948,共8页Semiconductor Technology

基　　金：国家自然科学基金资助项目(41606219,41776186)

摘　　要：随着器件特征尺寸缩小,发生在敏感节点之间的电荷共享使加固静态随机存储器(SRAM)单元容易发生单粒子翻转(SEU)。通过对ROCK,WHIT,Quatrol及JUNG等SRAM单元的SEU加固机理分析,提出一种新型SEU加固SRAM单元,并从面积、延时、功耗和SEU恢复时间等方面对传统加固单元和新结构进行了对比与分析。结果表明新型SEU加固SRAM单元具有更高的临界电荷和更低的SEU恢复时间。由于其只有两个翻转敏感节点对,新结构抗SEU的能力优于ROCK,Quatrol和JUNG结构。新提出的结构以较小的面积和性能代价,显著提高SRAM单元抗SEU能力,可有效降低SRAM型存储器在深亚微米工艺节点的软错误率。With the reduction of the device feature size,charge sharing between sensitive node pairs could easily cause the single event upset (SEU)of hardened static random access memory (SRAM)cell. The hardening fundamentals of SEU for SRAM cell such as ROCK,WHIT,Quatrol and JUNG were ana- lyzed,and a novel SEU hardened SRAM cell was proposed.The area,delay,power consumption and SEU recovery time of the traditional hardened SRAM cells and the new structure were compared and ana- lyzed.The results show that the new SEU hardened SRAM cell has more critical charges and less SEU re- covery time than previous hardened cells.Because there are only two sensitive node pairs in the new structure,it has better SEU tolerant capability than ROCK,Quatrol and JUNG structure.With little area penalty and performance degradation,the SEU tolerant capability of SRAM cell is greatly improved, which can dramatically reduce the soft error rate of SRAM in deep sub-micron process.

关 键 词：单粒子翻转(SEU) 静态随机存储器(SRAM) 抗辐照加固设计 多节点翻转 存储器 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP333[自动化与计算机技术—计算机系统结构]