IGBT封装形式对结温测量精度的影响  

Influence of IGBT Package Types on the Accuracy of Junction Temperature Measurement

作　　者：邓二平 陈杰[1] 赵雨山 赵子轩 赵志斌[1] 黄永章[1] Deng Erping;Chen Jie;Zhao Yushan;Zhao Zixuan;Zhao Zhibin;Huang Yongzhang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources North China Electric Power University,Beijing 102206,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学)

出　　处：《半导体技术》2018年第12期956-963,共8页Semiconductor Technology

基　　金：国家电网公司科技项目(SGRI-GB-71-16-002)

摘　　要：高压大功率绝缘栅双极型晶体管(IGBT)器件的不同封装形式(压接型IGBT器件和焊接式IGBT模块)使其热学特性尤其是散热路径存在很大差异,最终可能会影响结温测量方法的适用性和准确性。基于有限元法建立了可表征压接型封装和焊接式封装的等效热学仿真模型,详细研究了小电流下饱和压降结温测量法的物理过程,对比分析了两种封装形式结温测量的精确度。仿真结果表明,小电流下饱和压降结温测量法存在固有测量误差的问题,在高压大功率IGBT模块中尤为突出,但是由于压接型IGBT器件双面散热的特性使芯片内部温度分布更均匀,也使结温测量的误差相对较小。The thermal characteristics between press pack insulated gate bipolar transistors (PP IG- BTs)and IGBT modules are different,especially the thermal dissipation path,due to their different package types.This distinction may affect the applicability and accuracy of the existed method of junction temperature measurement.Based on the finite element method,an equivalent thermal simulation model was established,which was used to characterize the two package types (PP IGBTs and IGBT modules). The physical process of junction temperature measurement using saturation voltage drop at small constant current was studied in detail,and the accuracies of junction temperature measurement methods between the PP IGBTs and the IGBT modules were compared.The simulation results show that the junction tem- perature measurement method using saturation voltage drop at small constant current has the inherent measurement error,especially for high-voltage and high-power IGBT modules.However,due to the doub- le-sided cooling characteristic of PP IGBTs,the internal temperature distribution of the chip is more uni- form and this leads to a relatively smaller error of the junction temperature measurement.

关 键 词：压接型绝缘栅双极型晶体管(IGBT) 焊接式IGBT模块 结温测量方法 封装形式 测量精度 

分 类 号：TN322.8[电子电信—物理电子学]