GaN基低温无金欧姆接触电极制备及应用  

Fabrication and Application of GaN-Based Au-Free Low Temperature Ohmic Contact Electrodes

作　　者：李祈昕 周泉斌 刘晓艺 王洪[1,2,3] LI Qi-xin;ZHOU Quan-bin;LIU Xiao-yi;WANG Hong(Engineering Research Center for Optoelectronics of Guangdong Province,School of Electronics and Information Engineering,South China University of Technology,Guangzhou 510640,China;School of Physics and Optoelectronics,South China University of Technology,Guangzhou 510640,China;Zhongshan Institute of Modern Industrial Technology,South China University of Technology,Zhongshan 528177,China)

机构地区：[1]华南理工大学广东省光电工程技术研究开发中心,广东广州510640 [2]华南理工大学电子与信息学院,广东广州510640 [3]中山市华南理工大学现代产业技术研究院,广东中山528177

出　　处：《光学与光电技术》2018年第6期71-77,共7页Optics & Optoelectronic Technology

基　　金：广东省应用型科技研发专项资金重大项目(2015B010127013;2016B010123004;2017B010112003);广州市产学研协同创新重大专项(201504291502518;201604046021);中山市科技发展专项(2017F2FC0002;2017A1007)资助项目

摘　　要：制备了一种与Si-CMOS工艺线兼容的AlGaN/GaN HEMTs低温无金欧姆接触电极,分析了欧姆前刻槽深度和退火合金条件对Si基AlGaN/GaN异质结无金欧姆接触特性的影响。系统研究了具有不同欧姆前刻槽深度、不同退火条件的AlGaN/GaN异质结的Ti/Al/Ti/TiW无金电极的电流-电压特性、接触电阻率以及电极表面形貌。并利用低温退火的Ti/Al/Ti/TiW无金工艺制备了AlGaN/GaN异质结MISHEMT器件。实验结果表明,采用该无金工艺可得到比接触电阻率为5.44×10-5Ω·cm2、表面形态平整的欧姆接触电极,所制备的AlGaN/GaN异质结MISHEMT器件,在VGS=0V时的源漏饱和电流(IDSS)为345.7mA/mm,对未掺杂AlGaN/GaN HEMTs器件的低温无金欧姆接触的实现具有指导意义。An AlGaN/GaN HEMTs low temperature Au-free ohmic contact electrode is prepared,which is compatible with Si-CMOS production line.The effects of the depth of pre-ohmic recess and the annealing alloy condition on the Aufree ohmic contact characteristics of Si-based AlGaN/GaN heterojunction are analyzed.The current-voltage characteristics,contact resistivity and surface morphology of the Ti/Al/Ti/TiW Au-free contact electrodes with different ohmic recess and annealing conditions are systematically investigated.AlGaN/GaN MISHEMTs are fabricated by low temperature annealed Ti/Al/Ti/TiW Au-free process.The experimental results show that the ohmic contact electrodes with contact resistivity of 5.44×10^-5Ω·cm^2 and smooth surface morphology can be obtained by using Au-free process.The source and drain saturation current of this device is IDSS=345.7 mA/mm at gate-source voltage VGS=0 V.It is of great significance for the realization of low temperature Au-free ohmic contact process for undoped AlGaN/GaN HEMTs devices.

关 键 词：氮化镓基高电子迁移率晶体管 无金欧姆接触 低温合金 欧姆前刻槽 退火工艺 

分 类 号：TN304[电子电信—物理电子学]