GaN基薄膜半导体材料不同非线性效应的竞争关系  

Competition between different nonlinear optical effects of GaN-based thin-film semiconductors

作　　者：廖健宏[1] 曾群[1] 袁茂辉 Liao Jian-Hong;Zeng Qun;Yuan Mao-Hui(Cuangzhou Key Laboratory for Special Fiber Photonic Devices and Applications,School of Information and Optoelectronic Science and Engineering,South China Normal University,Guangzhou 510006,China;College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]华南师范大学信息光电子科技学院,广州市特种光纤光子器件重点实验室,广州510006 [2]国防科技大学前沿交叉学科学院,长沙410073

出　　处：《物理学报》2018年第23期176-181,共6页Acta Physica Sinica

摘　　要：采用金属有机化合物化学气相沉积方法生长了未掺杂GaN, p型Mg掺杂GaN, InGaN/GaN多量子阱等薄膜半导体材料,研究了其在800 nm飞秒激光激发下的非线性光学性质.实验结果表明,在800 nm飞秒激光激发下,多光子荧光、二次谐波等非线性光学信号之间存在着竞争关系,反映出不同非线性光学信号对激发光的能量分配存在着竞争,并通过其非线性光学信号强度与激发强度之间的依赖关系进行了验证.同时,本文对其竞争机理进行了初步探究.In recent years, new optoelectronic materials such as GaN-based thin-film semiconductors and rare-earth-ion doped luminescent materials have aroused the interest of many researchers. The GaN-based semiconductors have wide and direct energy gaps which could be adjusted to cover the whole visible light spectrum region by doping. They have been successfully applied to fabrications of blue lasers and light emitting diodes. The rare-earth-ion doped luminescent materials have exhibited many advantages in luminescent properties such as intense narrow-band emissions, high conversion efficiency, wide emission peaks ranging from ultraviolet to near infrared, long lifetime ranging from nanoseconds to milliseconds, and good thermal stability. They have been widely applied in the fields of illumination, imaging, display,and medical radiology. So far, the studies on GaN-based thin-film semiconductors and rare-earth-ion doped luminescent materials focus mainly on their growth and linear optical properties. In contrast, the investigations of the nonlinear optical properties of these materials, which have potential applications in many fields, are still lacking. In this paper,GaN-based thin-film semiconductors, such as undoped GaN, Mg-doped GaN and InGaN/GaN multiple quantum wells,are successfully grown by metal-organic chemical vapor deposition. Their nonlinear optical properties are studied by using an 800-nm femtosecond laser light. The nonlinear optical properties are different when the laser light is focused on different positions of the samples. The competition between different nonlinear optical effects reflect directly the competition in stimulated luminescence energy. And particularly, it is closely related to the density of energy states,stimulated luminescence energy, and the sample band gap energy difference. In addition, the competition between different nonlinear optical effects, such as multiphoton-induced luminescence and second harmonic generation, is clearly revealed and is manifested in the dependence of the no

关 键 词：氮化镓 稀土发光材料 非线性光学效应 

分 类 号：O437[机械工程—光学工程] TN304[理学—光学]