S波段GaN MMIC功率放大器的设计  

Design of a S Band GaN MMIC Power Amplifier

作　　者：刘世中 桑磊[1] LIU Shizhong;SANG Lei(Institute of Opto-Electronic Technology,Hefei University of Technology,Hefei 230009,P.R.China)

机构地区：[1]合肥工业大学光电技术研究院,合肥230009

出　　处：《微电子学》2018年第6期748-752,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61401143)

摘　　要：针对宽带单片微波集成电路(MMIC)功率放大器在匹配过程中存在电路枝节复杂、优化周期较长的问题,采用了低Q值多节LC匹配网络的方法,并结合阻抗在Smith圆图上的变化趋势,能快速确定输出级阻抗匹配网络的结构。基于0.25μm GaN HEMT工艺,设计了一种S波段MMIC功率放大器。采用多节LC电抗匹配单元,快速准确地设计了匹配电路,简化了电路设计流程。仿真结果表明,在2～4GHz工作频率范围内,输出功率大于38dBm,功率附加效率为29%～48.8%,功率增益为19.0～20.4dB,S11小于-7.7dB,S22小于-9.2dB。芯片尺寸为3mm×1.7mm。该功率放大器具有较高的实用价值。The matching circuit branch of the broadband MMIC power amplifier was complex,which led to the much long period of optimization.A method combining the low-Q muhi-section LC matching network with the impedance changing trend on the Smith chart was adopted to quickly determine the topology of the output impedance matching network.Based on a 0.25 μm GaN HEMT process,an S-band power amplifier was designed.The muhisection LC reactance matching unit was used to design the matching circuit quickly and accurately,which had simplified the circuit design flow.The simulation results showed that the output power was more than 38dBm,the power added efficiency was 29%-48.8%,the power gain was 19.0-20.4dB,Snwas less than -7.7dB,and S22 was less than -9.2dB from 2to 4GHz.The chip size was 3mm ×1.7mm.The power amplifier had good practical value.

关 键 词：宽带 低Q值 功率放大器 阻抗匹配 

分 类 号：TN722.75[电子电信—电路与系统]