基于入射距离的一维瞬态电流源注入模型研究  

Research of 1D Transient Current Source Model Based on Strike Distance

作　　者：文琦琪 周婉婷[1] 李磊[1] WEN Qiqi;ZHOU Wanting;LI Lei(Research Institute of Electronic Science and Technology,UESTC,Chengdu 611731,P.R.China)

机构地区：[1]电子科技大学电子科学技术研究院,成都611731

出　　处：《微电子学》2018年第6期806-810,814,共6页Microelectronics

基　　金：国家自然科学基金联合基金资助项目(U1630133);中央高校基本科研业务费资助项目(ZYGX2016J185)

摘　　要：在深亚微米工艺下,单粒子效应引入的瞬态电流与粒子入射位置有关。基于粒子入射距离,提出了一种针对电路级仿真的一维瞬态电流源注入模型。结果显示,电流源模型与三维TCAD仿真得到的瞬态电流形状拟合更好,NMOS和PMOS器件收集电荷量的计算误差分别下降了66.9%和65.0%。提出的电流源模型能够精确地反映粒子入射位置改变时6TSRAM电路的翻转情况,能更好地用于大规模集成电路的单粒子效应电路级模拟分析。Under the deep sub-micron process,the transient current introduced by the single event effect (SEE) is related to the ion strike location.Based on the ion strike position,a 1D transient current source model for circuit- level simulation was proposed.The results showed that the current source model and the 3D TCAD simulation of the transient current fitted better,and the calculation error of charge amount collected by NMOS and PMOS devices was reduced by 66.9%and 65.0%respectively.The current source model could accurately reflect the 6T SRAM circuit's flip situation when the ion strike location changed.It could be better used to do the SEE circuit-level simulation for large scale integration Circuit.

关 键 词：单粒子效应 瞬态电流源模型 电路级仿真 SRAM 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN406