C波段160W连续波GaN HEMT内匹配功率器件研制  

Development of a 160 W Continuous Wave Internally-Matched GaN HEMT Power Device at C-Band

作　　者：吴家锋[1] 徐全胜 赵夕彬[1] 银军[1] Wu Jiafeng;Xu Quansheng;Zhao Xibin;Yin Jun(The 13th Research Institute,CETC,Shijiazhuang 050051,China;The Project Management Center,Beijing 100034,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]装备项目管理中心,北京100034

出　　处：《半导体技术》2019年第1期27-31,共5页Semiconductor Technology

摘　　要：基于GaN功率器件工艺自主研发的大栅宽GaN高电子迁移率晶体管(HEMT)管芯,采用内匹配技术和宽带功率合成技术相结合的方法,研制出了一款C波段160 W连续波GaN HEMT内匹配功率器件。通过优化管芯的结构,设计出了满足连续波使用要求的大功率GaN管芯,然后进行了内匹配器件的设计,在设计中首先采用负载牵引法进行了器件参数提取,并以此为基础设计了阻抗变换网络进行阻抗变换和功率合成。研制出了工作频率为4.4~5.0 GHz、工作电压32 V、连续波输出功率大于160 W、功率附加效率大于50%、功率增益大于12 dB的GaN HEMT内匹配功率管,具有广阔的工程应用前景。Based on a self-developed large gate-width GaN high electron mobility transistor (HEMT)chip,a C-band 160W continuous wave internally-matched GaN HEMT power device was developed using a combination of internal matching and broadband power combined technology.By optimizing the chip structure,a high-power GaN chip was designed to meet the requirements of continuous wave,then the internally-matched device was designed.The device parameters were extracted by loadpull method,and an impedance transformation network was designed for impedance transformation and power synthesis.An internally-matched GaN HEMT power device was developed which working frequency is 4.4-5.0 GHz,operating voltage is 32V,continuous wave output power is greater than 160W,power added efficiency is more than 50% and the power gain is more than 12dB.The GaN power device has a broad prospect in engineering applications.

关 键 词：氮化镓 高电子迁移率晶体管(HEMT) 内匹配 功率合成 阻抗变换 

分 类 号：TN386[电子电信—物理电子学]