磨料特性对InP晶片集群磁流变抛光效果的影响  

Effects of Abrasive Characteristics on the Cluster Magnetorheological Polishing of InP Wafer

作　　者：路家斌[1] 孙世孔 阎秋生[1] 廖博涛 Lu Jiabin;Sun Shikong;Yan Qiusheng;Liao Botao(School of Electromechanieal Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学机电工程学院

出　　处：《半导体技术》2019年第1期32-37,50,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51375097);广东省自然科学基金重点项目(2015A030311044);广东省科技计划项目(2016A010102014)

摘　　要：对InP晶片进行了集群磁流变抛光实验,研究了抛光过程中磨料参数(类型、质量分数和粒径)对InP材料去除速率和表面粗糙度的影响。实验结果表明,InP晶片的去除速率随磨料硬度的增加而变大,表面粗糙度受磨料硬度和密度的综合影响;在选取的金刚石、SiC、Al2O3和SiO2等4种磨料中,使用金刚石磨料的InP去除速率最高,使用SiC磨料的InP抛光后的表面质量最好。随着SiC质量分数的增加,InP去除速率逐渐增加,但表面粗糙度先减小后增大。当使用质量分数4%、粒径3μm的SiC磨料对InP晶片进行抛光时,InP去除速率达到2.38μm/h,表面粗糙度从原始的33 nm降低到0.84 nm。An experiment of the cluster magnetorheological polishing was implemented for InP wafer.Effects of abrasive characteristics (such as the type,mass fraction and particle size)on the material removal rate and surface roughness of InP wafer were investigated.Experimental results indicate that the removal rate of InP increases with the increase of the abrasive hardness,and the surface roughness is affected by the hardness and density of the abrasive.The diamond abrasive can obtain a highest removal rate of InP,but silicon carbide (SiC)abrasive can gain the best polishing surface quality among the four types of abrasive (diamond,SiC,Al2O3 and SiO2).With the increase of the SiC abrasive mass fraction, the removal rate of InP increases gradually,but the surface roughness firstly decreases and then increases. The removal rate of InP is 2.38μm/h,and the surface roughness can be reduced from 33 nm to 0.84 nm when InP wafer was polished with the SiC abrasive with a mass fraction of 4% and a particle size of 3μm.

关 键 词：INP 磁流变抛光 磨料 表面质量 材料去除速率 

分 类 号：TN305.2[电子电信—物理电子学]