淬火技术对酸洗法提纯多晶硅的催化作用  

CATALYTIC EFFECT OF QUENCHING TECHNOLOGY ON PURIFICATION OF SILICON BY ACID LEACHING

作　　者：刘振东[1] 牛兴平[1] 戴玉强[1] 朱登雷 Liu Zhendong;Niu Xingping;Dai Yuqiang;Zhu Denglei(Department of Mathematics and Physics,Anyang Institute of Technology,Anyang 455000,China)

机构地区：[1]安阳工学院数理学院,安阳455000

出　　处：《太阳能学报》2019年第1期96-102,共7页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51075003;21302003)

摘　　要：采用淬火技术和酸洗络合技术提纯多晶硅。采用ICP测试多晶硅纯度,采用XRD、红外光谱、拉曼光谱、扫描显微镜、扫描电镜和能谱技术分析淬火对多晶硅提纯的催化机理,结果表明:1)淬火能减弱多晶硅杂质元素与硅之间的键能和键力,使多晶硅晶体出现缺陷和缩小硅体晶面间距;2)多晶硅杂质相主要由非晶金属氧化物或金属硅化物构成;3)采用酸洗络合技术和二次凝固技术可使多晶硅中B的移除率达到90%,同时其他金属杂质的移除率均在55%以上,提纯硅的纯度基本满足太阳电池的需求。The polysilicon is purified by quenching technology and acid leaching and complexation technique.Employing ICP to test the purity of the silicon,using XRD,infrared spectroscopy,Raman spectroscopy,SEM and EDS to research the mechanism of the quenching on poly-silicon purification,the results show that:①quenching weakens the bond energy and bond strength between the polysilicon impurity elements and the silicon,produces polysilicon defect,reduces the silicon interplanar spacing;②the silicon impurity phase are mainly amorphous metallic oxides or metallic silicides;③ the boron removal efficiency from polysilicon can be reached 90% via the acid leaching and complexation technique and solidification technique,meanwhile the removal efficiency of other metal impurities elements are above 55%. The purity of the purified silicon can basically meet the needs of the solar cells.

关 键 词：多晶硅 提纯 淬火 酸洗法 催化作用 

分 类 号：TF031[冶金工程—冶金物理化学]