利用I-V正向特性提取PN二极管主要参数的研究  

Study on the Extraction of PN Diode Parameters from Forward I-V Characteristics

作　　者：丁扣宝[1] 潘骏[2] 

机构地区：[1]浙江大学西溪校区信息与电子工程学系,杭州310028 [2]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《电子器件》2002年第1期27-28,共2页Chinese Journal of Electron Devices

摘　　要：研究了利用电流 -电压 (I- V)正向特性提取 PN结二极管参数的方法。与通常使用的 PN结二极管模型不同 ,本文模型考虑了并联电导对电流的影响。在 I- V特性曲线上读取四级 (V,I)值 ,用牛顿法对模型方程组进行数值求解 ,可提取出 PN结二极管的主要参数 :反向饱和电流 ,串联电阻 ,发射系数以及并联电导。结果表明 ,该方法简便。The procedure of extraction of PN diode parameters from forward I V charcteristics is studied. Differing from the usual model, the present model of PN diode consists of the effect of shunt conductance on the current. By reading out four ( V,I ) value from I V characteristics, the model equation group is numerically solved by Newton method. The PN diode parameters, such as the inverse saturation current, the series resistance, the emission factor, and the shunt conductance, could be extracted together. The computed results show that the procedure is very simple, convenient and practical.

关 键 词：PN结二极管 I-V正向特性 参数提取 

分 类 号：TN312[电子电信—物理电子学]