低温n+μc-Si在大面积a-Si太阳电池上的应用  

APPLICATION OF A N TYPE μc-Si:H TO LARGE SIZE INTEGRATED a-Si SOLAR CELLS

作　　者：耿新华[1] 孟志国[1] 陆靖谷 孙仲林 

机构地区：[1]南开大学电子科学系

出　　处：《太阳能学报》1991年第3期247-254,共8页Acta Energiae Solaris Sinica

摘　　要：为了提高大面积pin单结集成型非晶硅太阳电池的特性,采用掺磷低温微晶化硅(n^+μc-Si)做电池的n^+层,结果使10×0cm^2电池的开路电压从8.5V以下提高到9.0V以上,填充因子从0.62提高到0.65。本文对n^+μc-Si材料的特性及用于太阳电池的实验情况做了详细的介绍,并对实验结果进行了讨论。In order to improve the performance of the large area pin single junction integrated amorphous silicon solar cells,we have applied the p-doped μc-Si:H film to the n+ layer of 10×10cm2 amorphous silicon solar cells,increasing the open voltage from below 8.5V to above 9V and the fill factor from 0.62 to 0.65.The conversion efficiency of 8.55% is achived.In this paper the properties of p-doped μc-Si:H material and the experiments used on solar cells were introdnced.Finally the experiment results were discussed.

关 键 词：太阳能电池 A-SI n^+μc-Si 低温 

分 类 号：TM914.4[电气工程—电力电子与电力传动]