硅光电负阻器件的构成原理与分类  

The Composition Principle and Classification of Silicon Photo-negative Resistance Devices

作　　者：郭维廉[1] 

机构地区：[1]天津大学电子信息工程学院,300072

出　　处：《固体电子学研究与进展》2002年第1期120-126,共7页Research & Progress of SSE

基　　金：国家自然科学基金 (编号 694770 11)资助课题

摘　　要：将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 。By combining the three terminal negative resistance devices and silicon photo detectors, the author of this paper has proposed and composed a novel category of optoelectronic devices--silicon photo negative resistance device successfully. In this paper, the general principle of composing the devices and the classfication of the devices have been described in detail.

关 键 词：硅光电器件 负阻器件 光电逻辑器件 分类 构成原理 

分 类 号：TN364.3[电子电信—物理电子学]