考虑量子力学效应的超薄栅氧nMOSFET's直接隧穿电流二维模型  

Modeling on 2-D Direct Tunneling Currentin Ultra-Thin Oxide nMOSFET's Considering Quantum Mechanics

作　　者：陈立锋[1] 马玉涛[1] 田立林[1] 

机构地区：[1]清华大学微电子所,北京100084

出　　处：《Journal of Semiconductors》2002年第4期419-423,共5页半导体学报（英文版）

摘　　要：研究了超薄栅氧 MOS器件的直接隧穿 (direct tunneling,DT)电流模型问题 .利用修正的 WKB近似方法(m odified WKB,MWKB)得到电子隧穿栅氧的几率 ,利用修正的艾利函数 (modified Airy function,MAF)方法计算得到在高电场条件下载流子的量子化能级 ,从而计算出在不同偏置条件下的 DT电流 .模型实现了 n MOSFET's栅隧穿电流的二维模拟 ,可以模拟在不同栅漏偏置条件下的器件工作情况 ,具有较广泛的适用性 .通过对比表明 ,本模型能够与实验结果很好地吻合 ,且速度明显优于数值方法 .利用模型可很好地对深亚微米Modeling of DT(direct tunneling) current in ultra- thin gate oxide n MOSFET's is researched.Quantized energy lev- els under the high electron field are calculated with the modified Airy function(MAF) m ethod and the tunneling probability of electrons through the gate oxide is obtained through the modified WKB(MWKB) method.From these the distribution of DT current is computed.2 - D sim ulation of MOSFET's is realized in this m odel,and it can be used to sim ulated device status under various biases.Com parison of sim ulating results with experimental data verifies the validity of the m odel.And the efficiency is much higher than the complete analytical m ethod.With this model the gate DT current characteristics of deep- m icron MOS devices can be predicted with satisfaction.

关 键 词：量子力学效应 超薄栅氧 直接隧穿电流 二维模型 MOSFET's 

分 类 号：TN386.1[电子电信—物理电子学]