SiC埋层的制备与性质研究  

Study on preparation and properties of SiC buried layer

作　　者：吴春瑜[1] 沈桂芬[2] 王颖 朱长纯[1] 李玉魁[1] 白纪彬 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049 [2]辽宁大学物理系,沈阳110036 [3]西安电力电子研究所,西安710064

出　　处：《功能材料与器件学报》2002年第1期5-7,共3页Journal of Functional Materials and Devices

基　　金：辽宁省科委自然科学基金(No.972094);国家自然科学基金资助项目(No.69876013)

摘　　要：在衬底温度400℃条件下对n型(100)单晶硅进行剂量分别为5×1017cm-1和1×1018cm-1的C+注入,经过在1050℃氮气氛下进行60min退火形成β-SiC埋层。通过X射线光电子能谱(XPS),俄歇电子能谱(AES)及付立叶变换红外吸收光谱(FTIR),对所形成的碳化硅埋层进行了测试与分析。结果表明在此条件下,在Si中可以形成一定的SiC埋层,并且C+离子注入硅衬底可以形成β-SiC和α-SiC。SiC埋层主要由非立方相的α-SiC和立方相的β-SiC所构成。Carbon ions were implanted into Si substrates at an energy of 45keV with dose of 5×1017cm-1 and 1×1018cm-1 at about 400℃. after annealing at 1050℃ for 60min , the precipitates of SiC were formed. The SiC buried layer was studied by X-ray photo-emission spectroscope (XPS), Fourier transform infrared spectroscope (FTIR) and Auger electronic spectroscope (AES). The results show that SiC buried layer is formed in silicon underlayer, which consists of non-cubic α-SiC and cubic β-SiC.

关 键 词：离子束合成 能量损失谱 碳化硅埋层 半导体材料 制备 性质 

分 类 号：TN304.24[电子电信—物理电子学]