具有非磁性中间层的RE-TM双层垂直磁化膜耦合研究  

Exchange Coupling Mechanism of RE-TE Bilayers MO Films Using The Non-magnetic Intermediate Layer

作　　者：王浩敏[1] 林更琪[1] 廖红伟[1] 彭烈涛[1] 李 震[1] 王 可[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《信息记录材料》2002年第2期10-12,21,共4页Information Recording Materials

摘　　要：研究了光调制直接重写磁光记录介质中存储层（TbFeCo）和写入层（DyFeCo）中加入TiN非磁性层后的耦合性能。当 TiN层为 3～21A,存储层和写入层层间交换耦合能密度为 0.2～0.3 erg/cm2,如果能精确控制 TiN的厚度,就可以控制层间耦合能,从而改善MO薄膜的读写特性。The exchange coupling study of which a non-magnetic intermediate TiN layer was interposed between the memory layers (TbFeCo) and the writing layers (DyFeCo). The exchange coupling energy is about 0. 2 - 0. 3erg/cm2 when the thickness of the intermediate TiN is in 3 -2lA. In tri-layered structure TbFeCo/TiN/DyFeCo, coupling energy can be lowered effectively when the thickness of intermediate TiN layer is in 3 - 21 A. The property can be favorable to writing and erasing of the MO films.

关 键 词：非磁性中间层 RE-TM双层垂直磁化膜 耦合 研究 交换耦合 磁光薄膜 

分 类 号：TQ597.91[化学工程—精细化工]