p型碲镉汞液相外延材料Ag掺杂的研究  

Ag DOPING OF p-TYPE HgCdTe GROWN BY LPE

作　　者：俞谦荣[1] 杨建荣[2] 黄根生[2] 陈新强[2] 夏义本[1] 何力[2] 

机构地区：[1]上海大学材料科学与工程学院,上海201800 [2]中国科学院上海技物所半导体材料器件研究中心,红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2002年第2期91-94,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金 (批准号 6942 5 0 0 2 )资助项目~~

摘　　要：利用SIMS和变温霍尔测量手段对 p型Hg0 .77Cd0 .2 3 Te液相外延材料的Ag掺杂技术、机理及掺杂碲镉汞材料的性能进行了研究 .结果表明采用AgNO3 溶液直接浸泡方式对该材料进行掺Ag是成功的 ,掺杂浓度与被掺杂材料中的汞空位浓度是一致的 ,掺杂后 ,p型碲镉汞材料的受主能级比掺杂前有明显的减小 。SIMS (secondary ion mass spectrum) and variable temperature Hail measurement were employed to study the doping of Ag and the electrical properties of Ag-doped HgCdTe films grown by LPE. The results show that the Ag-doping in HgCdTe by soaking HgCdTe in AgNO3 solution is effective and the dopant concentration is equal to the Hg vacancy concentration of undoped HgCdTe film. After Ag doping, the acceptor energy of p-type HgCdTe has an obvious decrease. It was also found that the electrical properties of Ag-doped HgCdTe films can keep stable at room temperature.

关 键 词：霍尔测试 二次离子质谱 电学性质 银掺杂 红外探测器 P型碲镉汞 液相外延材料 AG掺杂 

分 类 号：TN213[电子电信—物理电子学]