MWPCVD低温合成纳米碳管的生长机理  

Mechanism of Carbon Nanotubes Growth Through MWPCVD at Low Temperature

作　　者：王升高[1,2] 汪建华[3] 满卫东[3] 马志彬 王传新 

机构地区：[1]中国科学院等离子体物理研究所 [2]武汉化工学院材料科学与工程系,武汉430073 [3]武汉化工学院材料科学与工程系

出　　处：《无机化学学报》2002年第6期611-614,共4页Chinese Journal of Inorganic Chemistry

摘　　要：The synthesis of carbon nanotubes￡¨CNTs ￡(c)at low temperature has received a gre at deal of attention and be-comes a challenging issue￡(r)But few mo del which accounts for the growth of C NTs is suited for the synthesis of CNTs by microwave plasma chemical vapor deposition￡¨MWPCVD￡(c)at low temperature because most rese archers conclude that the growth mechanism is determi ned by the catalyst-supporter interaction while ignored the diffusion o f carbon in the catalyst￡(r)In this paper,under the catalytic effect of cobalt supported by SiO 2 and Al 2 O 3 ,CNTs are synthe-sized by MWPCVD at about 500℃,and tip-growth,the model which accounts fo r the catalytic growth of CNTs is outlined￡(r)It is the temperature difference between the upper and bottom o f the catalytic particle that results in the diffusion of carbon atoms from upper to the bottom,and precipitation of s aturated carbon on the bottom surface to form CNTs￡(r)The synthesis of carbon nanotubes￡¨CNTs ￡(c)at low temperature has received a gre at deal of attention and be-comes a challenging issue￡(r)But few mo del which accounts for the growth of C NTs is suited for the synthesis of CNTs by microwave plasma chemical vapor deposition￡¨MWPCVD￡(c)at low temperature because most rese archers conclude that the growth mechanism is determi ned by the catalyst-supporter interaction while ignored the diffusion o f carbon in the catalyst￡(r)In this paper,under the catalytic effect of cobalt supported by SiO 2 and Al 2 O 3 ,CNTs are synthe-sized by MWPCVD at about 500℃,and tip-growth,the model which accounts fo r the catalytic growth of CNTs is outlined￡(r)It is the temperature difference between the upper and bottom o f the catalytic particle that results in the diffusion of carbon atoms from upper to the bottom,and precipitation of s aturated carbon on the bottom surface to form CNTs￡(r)

关 键 词：MWPCVD 低温合成 钠米碳管 生长机理 微波等离子体化学气相沉积法 

分 类 号：O613.71[理学—无机化学] TB383[理学—化学]