立方织构Cu-Ni基带及缓冲层的研究  

Cu-Ni Textured Tapes and Buffer Layer for HTS Coated Conductor

作　　者：史锴[1] 杨坚[1] 刘慧舟[1] 胡广勇[1] 舒勇华[1] 王晓华[1] 袁冠森[1] 

机构地区：[1]北京有色金属研究总院

出　　处：《稀有金属》2002年第3期166-168,178,共4页Chinese Journal of Rare Metals

基　　金：国家超导研究开发中心资助项目;国家重点基础研究专项资助项目 (G19990 64 60 5 )

摘　　要：系统研究了Cu Ni合金基带和纯Ni基带的织构形成及转变规律 ,重复地获得了稳定的再结晶 { 0 0 1}<10 0 >立方织构。用表面氧化外延 (SOE)法生成了NiO(2 0 0 )薄膜。轧制总加工率、轧制道次和轧制方向对轧制织构的形成起主要作用 ;再结晶温度、时间是立方织构形成的主要影响因素。在获得了强立方织构Cu Ni合金基底上(其中Φ扫描曲线的半高宽 (FWHM)≤ 10°) ,通过SOE方法得到了取向良好NiO(2 0 0 )A systematic study of texturing mechanism in pure Ni and Cu Ni alloys was presented. Sharp cube textured Cu Ni and pure Ni substrate could be obtained in a reproducible way after cold rolling and recrystallization. Meanwhile, a SOE method was used to form NiO(200) on the Cu Ni alloy substrate as a buffer layer. The results show that the rolling deformation, rolling pass and rolling direction take important roles in obtaining rolling texture. The recrystallization temperature and time are the main factors. The biaxially textured NiO layers are formed on Cu Ni alloy tapes which are highly {001}<100> textured substrates with FWHM(Full Width Half Maximum)≤10°.

关 键 词：立方织构 Cu-Ni基带 缓冲层 铜-镍基带 超导体材料 

分 类 号：TM26[一般工业技术—材料科学与工程]