吸除方程组的变换变量法求解  

SOLUTION OF GETTERING EQUATIONS BY CHANGING VARIABLE METHOD

作　　者：陈畅生[1] 

机构地区：[1]武汉大学物理系

出　　处：《武汉大学学报（自然科学版）》1991年第1期29-34,共6页Journal of Wuhan University(Natural Science Edition)

摘　　要：利用变换变量法,我们得到了在只考虑吸除源对金属杂质的凝聚阱作用时,描述金属杂质原子在硅单晶内被吸除的动力学过程的吸除方程组的解析解,并具体用之讨论硅底面的不同吸除源对金杂质的吸除特性。理论结果完满地解释了机械损伤吸除的实验结果;与掺 P 层吸除结果的差异说明完善的吸除机理还须考虑吸除源中自隙原子的存在对吸除的贡献。The set of gettering equations,which describes the gettering of metallic impurities in silicon with getters served only as a sink of impurity atoms,is solved analystically by changing variable method.Its results has been used to discuss the gettering features of gold in silicon with backside getters.It ex- plains the experimental resulte of mechanical damage gettering perfectly,but have a larger difference in gettering depth for the P doped gettering.This shows that a reasonable gettering mechanism should make a further step to conskder the contribution of Si interstitials existed in gettess to the gettering.

关 键 词：吸除方程组 硅 单晶 金属杂质 

分 类 号：TN304.12[电子电信—物理电子学]