Investigation of Residual Donor Defects in Undopedan d Fe-Doped LEC InP  

非掺及掺铁磷化铟中的残留施主缺陷(英文)

作　　者：赵有文[1] 孙聂枫[2] 冯汉源[3] C.D.Beling 孙同年[2] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料中心,北京100083 [2]河北半导体研究所,石家庄050051 [3]香港大学物理系

出　　处：《Journal of Semiconductors》2002年第5期455-458,共4页半导体学报（英文版）

摘　　要：The free electron concentration of as-grown liquid encapsulated Czochralski (LE C) InP measured by Hall effect is much higher than the concentration of net dono r impurity determined by glow discharge mass spectroscopy.Evidence of the existe nce of a native donor hydrogen-indium vacancy complex in LEC undoped and Fe-do ped InP materials can be obseved with infrared absorption spectra.The concentra tion increase of the donor complex correlates with the increase of ionized deep acceptor iron impurity Fe concentration in Fe-doped semi-insulating (S I) InP.These results indicate that the hydrogen-indium vacancy complex is an im portant donor defect in as-grown LEC InP,and that it has significant influence on the compensation in Fe-doped SI InP用辉光放电质谱 ( GDMS)测量了原生液封直拉 ( L EC)磷化铟 ( In P)的杂质含量 .利用霍尔效应测到的非掺L EC- In P的自由电子浓度明显高于净施主杂质的浓度 .在非掺和掺铁 In P中都可以用红外吸收谱测到浓度很高的一个氢 -铟空位复合体施主缺陷 .这个施主的浓度随着电离的铁受主 Fe2 + 浓度的增加而增加 .这些结果表明半绝缘体中氢

关 键 词：indium phosphide SEMI-INSULATING donor defect 

分 类 号：TN304.23[电子电信—物理电子学]