PbSrTiO_3铁电薄膜隧道结的I-V特性  

The I-V Character of Tunnel Junction Constituted by Ferroelectric Thin Film PbSrTiO_3

作　　者：陈红卫[1] 缪江平[1] 翟亚[1] 吴宗汉[1] 孙承休[2] 孙平[2] 

机构地区：[1]东南大学物理系,江苏南京210096 [2]东南大学电子工程系,江苏南京210096

出　　处：《应用科学学报》2002年第2期150-152,共3页Journal of Applied Sciences

基　　金：国家自然科学基金资助项目 (5 99770 0 2 )

摘　　要：报道了对用射频磁控溅射法制备的钛酸锶铅 (PST)薄膜隧道结进行的 I V特性的测量 ,发现有负阻现象 。The ferroelectric thin film PbSrTiO 3 is a typical ferroelectric film with wide application. In this paper, the measurement of the IV characteristics of this thin ferroelectric system, which was prepared by RF magnetron spattering method is reported. We found, for the first time, the negative resistance phenomenon, and interpreted it through the application of the theory of surface plasmon polariton (SPP) and polarized wave.

关 键 词：PbSrTiO3 隧道结 I-V特性 钛酸锶铅铁电薄膜 表面等离极化激元 极化波理论 负阻 隧穿电子 

分 类 号：TM223.014[一般工业技术—材料科学与工程]