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机构地区:[1]西北有色金属研究院,宝鸡721014 [2]东北工学院,沈阳110006
出 处:《稀有金属材料与工程》1991年第5期41-48,共8页Rare Metal Materials and Engineering
摘 要:研究了热丝偏压化学气相沉积法在(111)取向的单晶硅基体上生长金刚石薄膜的工艺。合成过程中碳氢化合物和氢气的混合气体通入由热丝辐射加热的沉积室内,基体硅片置于热丝下方附近。经X光衍射、激光拉曼光谱和扫描电镜分析证明,合成膜呈多晶金刚石结构。膜的结构及生长特征与工艺条件有密切的关系。合成过程工艺比较稳定,实验结果重现性良好。The growth of diamond films on (111)si substrates by bias-controlled chemical vapor deposition have been studied. Deposition was carried out by passing gaseous mixture of hydrocarbon and hydrogen through a heated reaction chamber, in which a hot tungsten filament was held near the substrates. The results of X-ray diffraction, Raman spectrum and SEM analyses show that the films present polycrystalline diamond structure, the process of the films growth is stable and the repeatability of results is excellent. The effects of experimental conditions on the growth features were also studied.
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