激光诱导化学气相沉积法制备纳米晶硅的制备参数和退火工艺的研究  

The research of the preparation parameters and annealing technology of the nano-Si prepared by LICVD

作　　者：梁礼正[1] 张海燕[1] 何艳阳[1] 陈可心[2] 王卫乡[2] 刘颂豪[2] 

机构地区：[1]广东工业大学应用物理系,广东广州510080 [2]华南师范大学量子电子研究所,广东广州510631

出　　处：《激光杂志》2002年第2期48-51,共4页Laser Journal

摘　　要：用CO2 红外激光诱导化学气相沉积的方法制备纳米Si,激光强度越大 ,则SiH4受热温度越高 ,纳米Si的成核率越高 ,纳米Si核的密度越大 ,每一个核生长所吸收的Si原子数目越少 ,从而所得的纳米Si粒小而均匀。当激光强度减小到一个低限阈值 ,则SiH4温度太低 ,不能裂解。SiH4的流速越快 ,则纳米Si成核后生长期越短 ,纳米Si粒也小而均匀。当SiH4流速快到一个高限阈值 ,则SiH4受热时间太短 ,升不到裂解所需的高温。以上 2个产生纳米Si的阈值正相关。纳米Si制取后退火脱H ,344 0cm-1光谱带红移并增强 ,2 15 0cm-1光谱带形状变化 ,110 0cm-1光谱带由低频处蓝移而来并展宽。这都表明含O键在纳米Si很大的表面上出现。为了减轻含O键出现 ,纳米Si应在Ar气氛中而不是在空气中 ,从低于 30Prepare nano-Si by CO 2 infrared laser induced chemical vapour deposition.The larger the laser intensity is ,the higher the SiH 4 heated temperature will be,the higher the nano Si nucleation rate will be,the denser the nano Si nucleus will be,and the less Si atoms will be absorbed for the growth of each nano Si nucleus,thus,the nano Si particles will be small and even.When the laser intensity reduces to a low threshold,the temperature of SiH 4 is not so high that SiH 4 cannot be splitted.The faster the SiH 4 speed is,the shorter the period for the nano Si nucleus to growth,so that the nano Si particles will be small and even,too.When the SiH 4 flow speed is fast to a high threshold,the time for SiH 4 to be heated is so short that the high temperature for SiH 4 to be splitted will not be reached.These 2 threshould to produce nano Si are positively interrelated with each other.When nano Si particles are annealed for dehydrogenization after they are prepared,the 3440cm -1 spectrum band shifts toward the low frequency end and strongthen,the 2150cm -1 spectrum band changes its shape,and the 1100cm -1 spectrum band shifts from low freguency and widen.These show that the bonds containing O appear on the large surface of nano Si.To prevent the appearance of the bonds containing O,nano Si should be annealed in air and not in Ar atmosphere,and from the temperature lower than 300℃?

关 键 词：激光诱导 化学气相沉积法 制备 纳米晶硅 制备参数 退火工艺 红外吸收光谱 集成电路 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN704