注F^+加固CMOS/SOI材料的抗辐射研究  

Study on Anti-ionization Radiation in Injecting F^+ into COMS/SOI Materials

作　　者：武光明[1] 朱江[1] 高剑侠[2] 

机构地区：[1]北京石油化工学院,北京102600 [2]中国科学院上海原子核研究所,上海201800

出　　处：《电子元件与材料》2002年第2期28-29,共2页Electronic Components And Materials

摘　　要：向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。CMOS/SOI materials are prepared by injecting 170 keV F+ into SiO2 burying layers or Si/SiO2 interface of SIMOX material. The CMOS/SOI materials are radiated with 60Cog radiating device and their I-V characters are measured. The result shows that the anti-ionization radiation performances increase when F+ injected into the burying layers of CMOS/SOI materials. Furthermore, the performances of the material become much stronger when the dose of F+ is 11015cm-2. This is greatly beneficial to CMOS/SOI devices used in ionization radiation environment.

关 键 词：CMOS/SOI材料 抗辐射 加固 二氧化硅埋层掺杂 

分 类 号：TN305.3[电子电信—物理电子学]