G3DD164DW型NPN硅低频大功率晶体管低温特性研究  

A Research on the Low Temperatune Characteristics of G3DD164DW NPN Low Frequency Large Power Silicon Transistors

作　　者：冯秀清[1] 

机构地区：[1]辽宁工学院信息科学与工程系,辽宁锦州121001

出　　处：《辽宁工学院学报》2002年第1期24-26,共3页Journal of Liaoning Institute of Technology(Natural Science Edition)

摘　　要：就晶体管的直流增益 h F E在 - 5In this paper,a study has been done on the low temperature Charateristics of the DC gains of low frequency large power silicon transitors. According to the low temperature charactereristics of the DC gains h\-\{FE\} under -55℃,a discussion has been made on the improvement of the parameter performance.

关 键 词：低频大功率晶体管 晶体管 掺杂浓度 低温特性 直流增益 

分 类 号：TN323.1[电子电信—物理电子学]