蒸镀Cu-In合金硒化制CuInSe_2薄膜  

Growth of CIS Thin Films by Selenization of Co-evaporated Cu-In Alloy

作　　者：李文漪[1] 蔡珣[1] 周之斌[2] 茅及放[1] 李刚 许实 

机构地区：[1]上海交通大学教育部高温材料及高温测试开放实验室,上海200030 [2]上海交通大学太阳能研究所 [3]上海交通大学分析测试中心

出　　处：《上海交通大学学报》2002年第5期616-619,共4页Journal of Shanghai Jiaotong University

摘　　要：利用两源蒸镀 Cu- In合金膜 ,在半封闭石墨盒中硒化 ,制备了具有单一黄铜矿结构的Cu In Se2 ( CIS)薄膜 .实验研究了合金膜组分与薄膜结构、形貌的关系 .探讨了不同硒化温度对 CIS薄膜组织结构、成分和晶粒尺寸的影响 .结果表明 ,单一结构有利于 Cu- In合金膜的均匀和平整 .硒化过程中 ,随着硒化温度的升高 Cu的损失量增加 ,In的损失量相对减少 ;在 30 0°C硒化时开始出现 CIS黄铜矿结构 ,35 0°C硒化所得薄膜绝大多数为 CIS结构 ,5 0 0°C制得单一结构的Thermal co evaporated technique (from two sources Cu wire and In) was used to prepare Cu In thin films. The crystallization of CuInSe 2 thin films by high Se vapor selenization of Cu In alloy within a partially closed graphite container was reported. Controlling the evaporation rates from the source is helpful to get films having expected Cu/In atomic ratio. XRD analysis of the Cu In alloy films displayed mainly the Cu 9In 4, Cu 11 In 9, CuIn and CuIn 2, without any peaks of Cu and In single elements on the temperature. In the selenization process, the dependence of the structure and morphology of CIS thin films was investigated in the temperature range 300-550 °C . Single phase chalcopyrite CuInSe 2 structure with preferential orientation in the (112) direction were obtained. The development of suitable windows layer to test the photovoltaic properties of these films is currently in progress.

关 键 词：CUINSE2 真空蒸镀 硒化 光伏材料 

分 类 号：TN304.055[电子电信—物理电子学] TM914.42[电气工程—电力电子与电力传动]