低纯度颗粒硅带上硅薄膜太阳电池  

CRYSTALLINE SILICON THIN FILM SOLAR CELL ON LOW PURITY SSP SUBSTRATE

作　　者：励旭东[1] 许颖[2] 李维刚[1] 姬成周[1] 李仲明[2] 马本堃[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京100875 [2]北京市太阳能研究所,北京100083

出　　处：《太阳能学报》2002年第3期290-292,共3页Acta Energiae Solaris Sinica

基　　金：国家科技部 973项目

摘　　要：采用廉价国产硅粉拉制的低纯度颗粒硅带 (SSP)作为衬底 ,利用快速热化学气相沉积 (RTCVD)方法外延多晶硅薄膜并制作了转换效率达 4 5 %的薄膜太阳电池。对衬底和薄膜特性、相关工艺及进一步的研究方向做了探讨。Polycrystalline silicon thin film solar cell with the high efficiency of 4.5% was fabricated. The low purity SSP (silicon sheet from powder) substrate without barrier layer was used with low cost. Processing conditions and characteristics of the substrate and the film prepared by RTCVD (rapid thermal chemical vapor deposition) were discussed. The impurities in the low purity SSP substrate were described.

关 键 词：快速热化学气相沉积 颗粒硅带 多晶硅薄膜 太阳电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]