GaAs微波单片集成电路的主要失效模式及机理  

The Basic Failure Modes and Mechanisms of GaAs Microwave Monolithic Integrated Circuit (MMIC)

作　　者：黄云[1] 

机构地区：[1]信息产业部电子第五研究所,广东广州510610

出　　处：《电子产品可靠性与环境试验》2002年第3期9-14,共6页Electronic Product Reliability and Environmental Testing

摘　　要：从可靠性物理的角度,深入分析了引起砷化镓微波单片集成电路(GaAsMMIC)退化或失效的主要失效模式及其失效机理,明确了 GaAs MMIC的可靠性问题主要表现为有源器件、无源器件和环境因素等引入损伤退化,主要的失效部位是MMIC的有源器件。Based on reliability physics, the basic failure modes and mechanisms of GaAs MMIC have been analyzed. Degeneration and damage related to active parts and passive parts of GaAs MMIC and environments are dominating reliability problems. The most failure locates active parts of MMIC.

关 键 词：砷化镓 微波单片集成电路 失效模式 退化机理 有源器件 

分 类 号：TN454[电子电信—微电子学与固体电子学]