金属杂质在硅中的分凝及其在器件工艺中的应用  

THE SEGREGATION OF METAL IMPURITIES IN SILICON AND ITS APPLICATION TO DEVICE TECHNIQUE

作　　者：郑国祥[1] 周寿通 邬建根[1] 王昌平[1] 屈逢源 丁志发 

机构地区：[1]复旦大学 [2]上海无线电十七厂

出　　处：《应用科学学报》1991年第3期263-268,共6页Journal of Applied Sciences

摘　　要：以金属杂质在硅中的分凝作为磷吸除的机理,以金为例,计算金在磷掺杂区和本征硅区的分凝系数,其结果和实验结果一致:硅器件工艺中适当低温的最终分凝退火能获得较佳的吸除效果.作者将该分凝退火技术用于光电探测器的制备中,获得了低于10pA/mm^2的暗电流值.该技术也适用于降低一般硅器件的结反向漏电流.经磷吸除后硅材料产生寿命值的提高也作了介绍.Heavy metal gettering in silicon devices has been investigated. The mechanisms of phosphorus diffusion gettering are generally attributed to induced dislocations or phosphide. It is shown in this work that the final annealing at low temperature is able to produce gettering action. The new gettering mechanism with segregation annealing is also discussed here. The segregation coefficients between phosphorus doped silicon and intrinsic silicon Suggest that the segregation bemperature must be as low as possible, but compatible with gold mobility.The segregation annealing technique can be used to obtain a dark current of less than 10pA/mm2 in making photoelectric detectors. The general applioability of the technique is also described.

关 键 词：硅 金属 杂质 分凝 磷吸除 

分 类 号：TN304.12[电子电信—物理电子学]