塑封高压硅堆成品管内部结构测试分析  

INTERNAL MICRO-STRUCTURE ANALYSIS OF PLASTIC SEALED HIGH VOLTAGE SILICON PILE

作　　者：王水凤[1] 曾宇昕[2] 刘南生[1] 

机构地区：[1]南昌大学物理学系,江西南昌330047 [2]南昌大学材料科学与工程系,江西南昌330047

出　　处：《南昌大学学报（理科版）》2002年第1期57-60,共4页Journal of Nanchang University(Natural Science)

摘　　要：针对塑封高压硅堆反向特性差的问题 ,采用“显微剖析”技术和“紫外荧光无损检测”(UVF)技术 ,对样管的内部结构及原材料进行测试分析 ,并与进口样管内部结构进行比较 ,找出了国产样管不足之处 。In view of the poor property of the reverse voltage of domestic plastic sealed high voltage silicon pile, comprehensive analyses including microstructure measurement and ultra-violet fluorescence (UVF) were employed to analyses the internal structure and the materials of high voltage silicon pile. Distinct differences are found after comparing the results of domestic high voltage silicon pile with the imported products, and several improving ways are presented.

关 键 词：塑封高压硅堆 成品管 内部结构 显微剖析 紫外荧光无损检测 半导体芯片 晶体管 

分 类 号：TN325.2[电子电信—物理电子学]