FORWARD GATED-DIODE METHOD FOR EXTRACTING HOT-CARRIER-STRESS-INDUCED BACK INTERFACE TRAPS IN SOI/NMOSFETs  

作　　者：He Jin Zhang Xing Huang Ru Wang Yangyuan(institute of Microelectronics, Peking University, Beijing 100871) 

出　　处：《Journal of Electronics(China)》2002年第3期332-336,共5页电子科学学刊（英文版）

基　　金：special funds of major state basic research projects (G20000365)

摘　　要：The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.The forward gated-diode R-G current method for extracting the hot-carrier-stress-induced back interface traps in SOI/NMOSFET devices has been demonstrated in this letter. This easy and accurate experimental method directly gives the induced interface trap density from the measured R-G current peak of the gated-diode architecture. An expected power law relationship between the induced back interface trap density and the accumulated stress time has been obtained.

关 键 词：Hot-carrier-stress Back interface traps R-G current Gated-diode SOI 

分 类 号：TN32[电子电信—物理电子学]