1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE  

选择外延技术研制 1.5μmDFB激光器和自对准模斑转换器集成器件(英文)

作　　者：邱伟彬[1] 董杰[1] 王圩[1] 周帆[1] 

机构地区：[1]中国科学院半导体研究所国家光电子工艺中心,北京100083

出　　处：《Journal of Semiconductors》2002年第7期681-684,共4页半导体学报（英文版）

摘　　要：High performance 1 57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self aligned selective area growth.The upper optical confinement layer and the butt coupled tapered thickness waveguide are regrown simultaneously,which not only offeres the separated optimization of the active region and the integrated spotsize converter,but also reduces the difficulty of the butt joint selective regrowth.The threshold current is as low as 4 4mA.The output power at 49mA is 10 1mW.The side mode suppression ratio (SMSR) is 33 2dB.The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively,the 1dB misalignment tolerance are 3 6μm and 3 4μm.利用选择外延技术研制了 1 5 μmDFB激光器和自对准模斑转换器单片集成器件 .激光器的上限制层与垂直方向上楔型波导的模斑转换器同时选择性生长 ,这样的方法不仅可以分别优化有源区和模斑转换器的材料 ,同时可以降低选择性生长对接结构的难度 .所研制集成器件的阈值为 4 4mA ,在 49 5mA下的输出功率为 10 1mW ,边模抑制比为 33 2dB ,垂直方向和水平方向上的远场发散角分别为 9°和 15°,1dB偏调容差分别为 3 6 μm和 3 4μm .

关 键 词：spotsize converter self  aligned butt  joint selective area growth 

分 类 号：TN248.4[电子电信—物理电子学]