新型半导体清洗剂的清洗工艺  

New Cleaning Technique of Semiconductor Detergent~*

作　　者：曹宝成[1] 于新好[1] 马洪磊[1] 

机构地区：[1]山东大学光电材料与器件研究所,济南250100

出　　处：《Journal of Semiconductors》2002年第7期777-781,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :6 0 176 0 32 )~~

摘　　要：报道了利用红外吸收谱、X射线光电子谱和表面张力测试仪对新型半导体清洗工艺进行研究的结果 .采用DGQ系列清洗剂清洗硅片时 ,首先需用HF稀溶液浸泡硅片 ,以利于将包埋于氧化层内的金属和有机污染物去除 ;溶液的配比浓度由临界胶束浓度和硅片表面的污染程度确定 ,要确保清洗过程中溶液内部有足够的胶束存在 ,一般DGQ 1、DGQ 2的配比浓度在 90 %到 98%之间 ;当温度接近表面活性剂溶液的浊点温度时 ,增溶能力最强 ,因而清洗液的温度定在 6 0℃ .A new type technique of semiconductor cleaning is studied via infrared absorption spectra,X ray photoelectron spectra and surface tension detector.When the DGQ serial detergents are used to clean the silicon wafers,firstly,the silicon wafers are sopped in the dilute HF solution in order to get rid of the metallic and organic contamination that is embedded in the oxidization layer of the wafer.The concentration of the detergent is determined by the critical micelle concentration.Sufficient micelle must be present in the solution during the cleaning and the concentration of DGQ 1 and DGQ 2 must be between 90% and 98%.Only when the temperature is around the turbid point temperature has the detergent solution the greatest dissolving ability,therefore,the operating temperature of the detergent is 60℃.

关 键 词：半导体 清洗剂 清洗工艺 红外吸收谱 X射线光电子谱 

分 类 号：TN305.97[电子电信—物理电子学]