界面电子转移对纳米TiO_2薄膜导电性的影响  

Influence of Interface Electrons Transfer on Conductivity of Nanometer TiO_2 Thin Films

作　　者：顾广瑞[1] 何志[1] 李英爱[1] 张崇才[2] 李卫青[1] 殷红[1] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室 [2]四川工业学院,成都610039

出　　处：《吉林大学学报（理学版）》2002年第3期273-275,共3页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金 (批准号 :5 98310 40 )

摘　　要：研究纳米 Ti O2 薄膜的导电性与薄膜厚度和基底材料的关系 .结果表明 ,沉积在 Ti和Si基底上的 Ti O2 薄膜的电阻率随着膜厚的增加而非线性增大 ,分别经历了导体、半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程 ,Ti O2 薄膜导电层厚度也不相同 ,沉积在玻璃表面 Ti O2 薄膜为绝缘体 .这些现象是界面电子在界面的转移所致 。The present paper presents the dependence of the conductivity of TiO 2 thin films on the different substrates and on the thickness of the films. It was found that the resistivity of the TiO 2 thin films deposited on Ti and Si substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on different substarte materials is different and the films deposited on glass are nonconductors. This is attributed to interface electrons transfer, and the conducting layer thickness is determined by the work function difference between substrates and thin films.

关 键 词：导电性 纳米TIO2薄膜 电阻率 界面电子转移 薄膜厚度 基底材料 二氧化钛 

分 类 号：TB383[一般工业技术—材料科学与工程] O484.42[理学—固体物理]