异质结硅太阳能电池a-Si:H薄膜的研究  

Analysis of the Design for a-Si:H thin film in a-Si/c-Si Heterojunction Solar Cells

作　　者：林鸿生[1] 段开敏[1] 马雷[1] 

机构地区：[1]中国科学技术大学物理系,安徽合肥230026

出　　处：《光电子．激光》2002年第5期460-464,共5页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目 ( 6 9876 0 2 4)

摘　　要：通过应用 Scharfetter- Gummel数值求解 Poisson方程 ,对热平衡态 p+(a- Si:H) / n(c- Si)异质结太阳能电池进行计算机数值模拟分析。结果指出 ,采用更薄 p+(a- Si:H)薄膜设计能有效增强光生载流子的传输与收集 ,从而提高 a- Si/ c- Si异质结太阳能电池的性能。同时 ,还讨论了 p+(a- Si:H)薄膜中 p型掺杂浓度对光生载流子传输与收集的影响。高强度光照射下模拟 ,计算表明 ,a- Si/ c-A computer simulation mdoel of p+ (a-Si:H)/n (c-Si) heterojunction solar cells at thermodynamic equilibrium using a Scharfetter-Gummel solution of Poisson's equation has been developed. The results indicate that the design of thinner p+ (a-Si:H) layer is employed to effectively increase the collection and transport of photo-generated carriers, enhancing the performances of a-Si/c-Si heterojunction solar cells. Also, the influence of p-type dopping concentration in p+ (a-Si:H) thin film on the collection and transport of photo-generated carriers in p+ (a-Si:H)/n (c-Si) heterojunction solar cells is discussed. Under the condition of prolonged light soaking, the simulation shows that a-Si/c-Si heterojunction structure solar cell possesses high light stability.

关 键 词：异质结 硅太阳能电池 A-SI:H薄膜 

分 类 号：TM914.42[电气工程—电力电子与电力传动]