工艺参数对磁控溅射磷化镓(GaP)薄膜沉积速率的影响  

Effect of technical parameters on deposition rate of GaP films depositted by magnetron sputtering

作　　者：郭大刚[1] 刘正堂[1] 宋健全[1] 耿东生[1] 

机构地区：[1]西北工业大学材料科学与工程学院,西安710072

出　　处：《兵器材料科学与工程》2002年第3期30-33,共4页Ordnance Material Science and Engineering

基　　金：航空基础科学基金 (98G5 3 10 4);国防基础科研计划 (J15 0 0E0 0 2 )资助

摘　　要：采用磁控溅射方法成功地在ZnS衬底上制备了磷化镓 (GaP)薄膜 ,并系统地研究了射频功率、气体流量、工作气压、衬底温度等主要工艺参数对GaP膜沉积速率的影响规律。实验表明 ,随着射频功率、气体流量的增加 ,沉积速率逐渐增大 ;工作气压增大 ,沉积速率降低 ;GaP films have been prepared on ZnS substrates by radio frequency (RF) magnetron sputtering, the effect of the major deposition parameters, such as RF power, gas pressure, gas-flow rate and substrate temperature, on the deposition rate of GaP films were discussed. The experimental results show the deposition rate increases as the RF power or the gas-flow rate rising, but it decreases as the gas pressure rising;the effect of the substrate temperature on the deposition rate of the GaP films is not remarkable.

关 键 词：磷化镓薄膜 工艺参数 磁控溅射 沉积速率 红外窗口材料 GAP 

分 类 号：O614.371[理学—无机化学]