Al/Al_2O_3陶瓷接合基板的制备及性能研究  

Research of the Performance of A1/A1_2O_3 Substrate

作　　者：彭榕[1] 周和平[1] 宁晓山[1] 徐伟[1] 林渊博[1] 

机构地区：[1]清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《无机材料学报》2002年第4期731-736,共6页Journal of Inorganic Materials

摘　　要：在675～825℃、氮气气氛下,使用石墨模具压铸的方法制备出Al/A12O3电子陶瓷基板,利用力学拉伸试验机测试了Al和Al2O3的结合强度,界面抗拉强度>15.94MPa,使用金相显微镜、SEM等微观分析仪器研究了其界面的微观结构.After getting rid of Al2O3 film from the surface of melting Al, Al can wet and bond Al2O3 substrate perfectly. In this work, by die-casting-bonding process, in the temperautre range of 948similar to1098K and under N-2 atmosphere, Al/Al2O3 substrates were produced successfully, The performance of Al/Al2O3 substrates was investigated by SEM and mechanic testing equipment. The bonding strength of Al/Al2O3 measured is more than 15.94MPa.

关 键 词：Al/Al2O3电子陶瓷基板 制备 性能 敷接 剥离强度 氧化铝 铝 结构 

分 类 号：TQ174.756[化学工程—陶瓷工业]