沟道形状对无结型多栅器件性能影响探究  

Study on the Effects of Channel Geometry on the Performance of Junctionless Field Effect Transistors

作　　者：胡梦月[1] 梁仁荣[1] 王敬[1] 许军[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《微电子学》2014年第3期380-383,共4页Microelectronics

基　　金：国家重点基础研究发展规划项目(2011CBA00602);国家科技重大专项(2009ZX02035-004-01;2011ZX02708-002)

摘　　要：随着集成电路特征尺寸进入纳米尺度,摩尔定律的延续受到一定的挑战,纳米技术代的晶体管亟需全新的材料、器件结构和工艺集成技术。在器件结构方面,无结型场效应晶体管由于其近似理想的电流电压特性、优良的等比例缩小能力以及极其简单的制造工艺,受到了人们广泛的关注。通过三维数值仿真工具Synopsys Sentaurus 3DTCAD,对多栅的无结型MOS晶体管进行了数值模拟仿真。并在此基础上探究了无结型器件沟道形状对其电学特性的影响,提出了具有倒角正梯形沟道的多栅无结型晶体管结构,验证了其相较于普通无结多栅型器件更加优良的电学特性,以及栅长下降至20nm以下节点时对短沟道效应的进一步抑制作用。In this study we analyze the influence of channel geometry on the performance of junctionless field effect transistors,which has recently been proposed as a promising alternative candidate for conventional MOSFETs in nano-scale technology nodes.Four channel geometrical structures are studied and compared,including rectangle,upper-corner,omega and trapezoid.Tri-gate structure is applied to junctionless transistor to enhance gate control ability over the channel.3-dimensional numerical simulation results show that compared to the junctionless transistor with a rectangle channel,trapezoidal-shape channel junctionless transistor exhibits better electrical characteristics,as well as better performance in suppression of short-channel effects（SCEs）.It has lower DIBL value,steeper subthreshold slope and higher on/off current ratio,especially when the gate length is scaled down below 20nm.

关 键 词：无结型晶体管 沟道形状 短沟道效应 

分 类 号：TN386.1[电子电信—物理电子学]