控电位法制备CdSe纳米线阵列及其性能研究  

Synthesis and Photoelectrochemical Properties of CdSe Nanowires by Constant Potential Deposition Method

作　　者：王宏智[1] 卢敬[1] 姚素薇[1] 张卫国[1] 

机构地区：[1]天津大学化工学院杉山表面技术研究室,天津300072

出　　处：《电镀与精饰》2014年第7期1-6,共6页Plating & Finishing

基　　金：天津市自然科学基金资助(11JCYBJC01900)

摘　　要：以SeO2为硒源,以阳极氧化铝为模板,采用电化学方法对SeO2在碱性电解液中的还原过程进行了分析,确定了控电位制备CdSe纳米线的沉积电位和镀液组成,并分析了其沉积机理。在此基础上,以阳极氧化铝为模板,通过控电位法成功获得CdSe纳米线阵列。采用扫描电子显微镜、透射电子显微镜和X-射线衍射对所制备的材料进行了形貌和结构表征。扫描电镜形貌分析表明,CdSe纳米线阵列高度有序、直径均一;直径约100 nm,与模板孔径一致。X-射线衍射测试表明,所制得的CdSe纳米线为立方晶型。光电性能测试表明,CdSe纳米线阵列电极的开路电位差值为324.8 mV,高于CdSe薄膜(125.5 mV);光催化降解罗丹明B测试表明,5 h后,CdSe纳米线的降解率达94.29%,强于CdSe薄膜(52.03%)。Using AAO as templates and SeO2 as Se source, reduction process of SeO2 was analyzed in alkaline electrolyte by electrochemistry method. The deposition potential and electrolyte consisting were obtained. We also investigated the deposition mechanism. Then CdSe nanowires were produced using constant potential deposition method in AAO templates. The morphology and structure characterization of CdSe nanowires arrays were investigated with scanning electron microscopy （SEM）, transmission electron microscopy（TEM） and X-ray diffraction （XRD）. SEM indicated that the sample was abundant, uniform and highly ordered over a large area. The diameter of CdSe nanowires was about 100 nm, which was same as the pore diameter of AAO template. X-ray diffraction （XRD） result demonstrated that the structure of CdSe nanowires was cubic phase. Photoelectric performance test showed that the open circuit potential of CdSe nanowires （ 324.8 that the photocatalysis d mV） was greater that of CdSe nano-films （ 125.5 mV）. Degra egradation efficiency reached to 94.29% after 5 hours ,which dation test showed was greater that of CdSe nano-films（52.03% ）.

关 键 词：AAO CdSe纳米线 电沉积 光电响应 光催化 

分 类 号：TQ153.2[化学工程—电化学工业] O646[理学—物理化学]