N掺杂p型MgZnO薄膜的制备与性能研究  

Preparation and characterization of N doped P-type MgZnO film

作　　者：高丽丽[1,2] 刘军胜[1] 张淼[1] 张跃林[1] 

机构地区：[1]北华大学物理学院,吉林吉林132013 [2]吉林大学物理学院,吉林长春130012

出　　处：《液晶与显示》2014年第4期499-503,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：吉林省教育厅"十二五"科学技术研究项目(No.2013189)

摘　　要：利用磁控溅射设备,Mg0.04Zn0.96O陶瓷靶材,以高纯的氮气与氩气混合气体作为溅射气体,在石英衬底上沉积获得了N掺杂p型Mg0.07Zn0.93O薄膜,薄膜的电阻率为21.47Ω·cm,载流子浓度为8.38×1016 cm-3,迁移率为3.45cm2/(V·s)。研究了该薄膜的结构与光学性能。实验结果显示,其拉曼光谱中出现了位于272和642cm-1左右与NO相关的振动模。低温光致发光光谱中,可以观察到位于3.201,3.384和3.469eV的3个发光峰,其中位于3.384eV的发光峰归因为导带电子到缺陷能级的复合发光,而位于3.469eV的发光峰归因为受主束缚激子(A0X)的辐射复合,这说明该N掺杂MgZnO薄膜的空穴载流子主要来自NO受主的贡献。Using 99.99% pure nitrogen and argon as sputtering gas,p-type N doped Mg0.07Zn0.93 O film was deposited on quartz substrate by radio frequency magnetron sputtering with Mg0.04Zn0.96 O target.The film has resistivity of 21.47 Ω · cm,Hall mobility of 3.45 cm2/（V · s） and carrier concentration of 8.38 × 1016 cm-3.The structure and optical properties of this film were studied.The Raman peaks of the N for O site （No） at 272 and 642 cm-1 were observed in the Raman spectrum.At the low temperature （80 K）,the photoluminescence spectrum of the p-type MgZnO ∶ N film showed three emission peaks centered at 3.201,3.384 and 3.469 eV,respectively.The 3.384 eV peak should originate mainly from recombining by conducting electrons to the defect level while the 3.469 eV peak originated mainly from acceptor bound exciton （A0X） emission.It can be deduced that the p-type conduction of this N doped Mg0.07 Zn0.93 O film was primary attributed to No acceptor defects.

关 键 词：射频磁控溅射 MgZnO薄膜 N掺杂 P型 

分 类 号：O472[理学—半导体物理]