高k栅介质SOI nMOSFET正偏压温度不稳定性的实验研究(英文)  

Experimental Study on Positive Bias Temperature Instability of SOI nMOSFETs with High-k Gate Dielectrics

作　　者：李哲[1] 吕垠轩 何燕冬[1] 张钢刚[1] 

机构地区：[1]北京大学微电子学研究院、教育部微电子器件与电路重点实验室,北京100871

出　　处：《北京大学学报（自然科学版）》2014年第4期637-641,共5页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家重点基础研究发展计划(2011CBA00606)资助

摘　　要：对高k栅介质SOI nMOSFET器件的PBTI退化和恢复进行实验研究,并且与pMOSFET器件的NBTI效应进行比较,分析PBTI效应对阈值电压漂移、线性及饱和漏电流、亚阈摆幅和应力诱导漏电流的影响。结果显示,PBTI的退化和恢复与NBTI效应具有相似的趋势,但是PBTI具有较高的退化速率和较低的恢复比例,这会对器件的寿命预测带来影响。最后给出在PBTI应力条件下,界面陷阱和体陷阱的产生规律及其对器件退化的影响。Experimental study on the positive bias temperature instability （PBTI） degradation and recovery of SOI nMOSFET with high-k gate dielectrics was conducted with comparison of negative bias temperature instability （NBTI） in pMOSFETs. A comprehensive analysis was presented on impacts of PBTI in terms of threshold voltage shift（Vth）, drain current in linear region （Idlin） and saturated region （Idsat）, subthreshold swing （S） and stress-induced leakage current （SILC）. The results show that the degradation and recovery of PBTI have the similar tendency as NBTI, but the higher degradation rate and lower recovery ratio than NBTI may produce an effect on the lifetime prediction. Interface traps and oxide traps generation under PBTI stress were investigated and their influences to the device degradation were also presented.

关 键 词：正偏置温度不稳定性(PBTI) 高介电常数栅介质 绝缘衬底上的硅型金属氧化层半导体场效应晶体管(soI MOSFET) 退化 应力诱导漏电流(SILC) 

分 类 号：TN386[电子电信—物理电子学]