采用Sn中介层的覆Al薄膜硅片键合技术研究  

Investigations of Aluminum-Coated Silicon Wafer Bonding Using Tin as Intermediate Layer

作　　者：朱智源[1] 于民[1] 胡安琪[1] 王少南[1] 缪旻[1,2] 陈兢 金玉丰[1] 

机构地区：[1]北京大学微米/纳米加工技术国家级重点实验室,北京100871 [2]北京信息科技大学信息微系统研究所,北京100101

出　　处：《北京大学学报（自然科学版）》2014年第4期741-744,共4页Acta Scientiarum Naturalium Universitatis Pekinensis

基　　金：国家科技重大专项(2009ZX02038)资助

摘　　要：研究采用Sn作为中间层键合覆盖Al薄膜的硅片。相对于Al-Al直接热压键合,该系统能提供低温、低压、快速的圆片级键合方案。采用直径为100 mm硅片,溅射一层500 nm厚度的Al层后,在N2气氛下进行450°C,30分钟退火,采用Ar等离子体清洗后,溅射一层500 nm厚度的Sn层。将硅片金属面紧贴在一起放入键合机中键合,在真空中进行。键合时间为3分钟条件下,得到平均剪切强度为9.9 MPa,随着键合时间增加,剪切强度显著降低。A method using tin as intermediate layer to bond aluminum-coated silicon wafers is researched. Compared with A1-AI direct thermo-compression bonding method, it provides a low temperature, low pressure and rapid wafer-bonding solution. The authors use 4-inch （100 mm） silicon wafers for the bonding experiment. A 500 nm-thick A1 layer is sputtered onto the wafers. The wafers are then annealed in N2 ambient at 450℃ for 30 minutes. Next, in situ Ar plasma sputter cleaning is performed followed by a 500 nm-thick tin layer deposition onto the aluminum layer. After that, the wafer pairs are loaded into a vacuum bonder. Average shear strength of 9.9 MPa is achieved after bonding for 3 minutes. With the increase of bonding time, the shear strength decreases significantly.

关 键 词：圆片级键合 低温 低压 剪切强度 

分 类 号：TN405[电子电信—微电子学与固体电子学]