MEMS F-P干涉型压力传感器  

MEMS F-P interferometry pressure sensor

作　　者：江小峰[1] 林春[1] 谢海鹤[1] 黄元庆[1] 颜黄苹[1] 

机构地区：[1]厦门大学物理机电学院,福建厦门361005

出　　处：《红外与激光工程》2014年第7期2257-2262,共6页Infrared and Laser Engineering

基　　金：福建省自然科学基金(2013J01251)

摘　　要：为了满足工业、航天、国防等领域对微型化压力传感器的需求，提出了基于微机电系统（MEMS，Micro electromechanical System）技术制作的非本征型光纤法布里-珀罗（F-P）压力传感器，该传感器传感头由全玻璃材料构成。主要研究了MEMS技术制作全玻璃结构式压力传感器工艺，结合溅射、光刻、腐蚀等工艺在7740 wafer基底上制作出F-P腔体，利用低压化学气相沉积（LPCVD）的方法在基底上沉积一层40 nm的非晶硅作为中间层。通过阳极键合技术在温度400℃下完成玻璃与玻璃的键合，并搭建了该传感器的压力测量平台。实验结果表明：在压力线性范围0-400 kPa内传感器具有很高的重复性，达到0.3%。灵敏度达到1.764 nm/kPa；在传感器使用范围0-80℃内，热敏感系数为0.15 nm/℃。该传感器的研究对设计制作改善了该类传感器的热膨胀失配问题，对低温漂型压力传感器的研究有一定参考价值。In order to meet the requirements of industry, aerospace and defense for miniature pressure sensors, an optical F-P interferometry pressure sensor which was made from all-glass material was presented, the sensor head of which was made from all-glass material. The processing steps of MEMS craft for fabrication of the all-glass optical pressure sensor were studied mainly , F-P cavity was made on 7 740 wafer based on sputtering, photolithography and etching technology, a 40 nm thick amorphous silicon layer deposited by low-pressure chemical vapor deposition （LPCVD） on this wafer was used as an intermediate layer. Then glass-to-glass anodic bonding was finished under the temperature of 380＆#176; . Finally, the pressure measurement system was established. The experiment result shows that a high repeatability in the range of 0-400 kPa pressure and a reasonable sensitivity of 1 . 764 nm/kPa have been obtained in this pressure sensor . The temperature-sensitivity coefficient of the sensor was about 0 . 15 nm/℃ in the range of 0-80℃. The study of the pressure sensor would be of utility value for design and fabrication of low temperature drift typed pressure sensor.

关 键 词：光纤传感器 MEMS 全玻璃材料 F—P腔制作 

分 类 号：TP394.1[自动化与计算机技术—计算机应用技术] TH691.9[自动化与计算机技术—计算机科学与技术]