基于大功率激光二极管的光导开关导通特性  

Conduction characteristics of photoconductive semiconductor switches based on high power laser diodes

作　　者：王卫[1] 邓建军[1] 夏连胜[1] 谌怡[1] 刘毅[1] 

机构地区：[1]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《强激光与粒子束》2014年第4期314-317,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(11035004)

摘　　要：研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性.激光二极管产生的激光脉冲中心波长为905 nm,脉冲宽度（FWHM）约20 ns,前沿约3.1 ns,抖动小于200 ps,峰值功率约90 W.所用光导开关为异面电极结构的砷化镓（GaAs）光导开关,电极间隙5 mm,偏置电压为15～22kV脉冲高压,工作在非线性（高增益）模式.测得光导开关最小导通电阻4.1Ω,抖动小于1 ns,偏置电压在18kV时平均使用寿命约200次.The characteristics of photoconductive semiconductor switches(PCSSs),based on laser diodes,are introduced in this paper,including the scheme and some finals in the experiments.This kind of switch may be used in the dielectric wall accelerator(DWA).The pulsed laser triggering the PCSS has the wavelength,full width at half maximum(FWHM),rise-time,and peak power of 905nm,20ns,3.1ns and 90W,respectively.The switch we used in the experiment is an opposed-contact GaAs photoconductive semiconductor switch.The electrode gap is 5mm,and when the bias pulsed voltage is between 15kV and 22 kV,the switch works in the nonlinear mode.The measured least closing resistance is 4.1Ω,root mean square(RMS)jitter is less than 1ns,and the average life-time of PCSSs is approximately 200shots under 18kV bias pulsed voltage.

关 键 词：光导开关 激光二极管 脉冲激光 非线性模式 

分 类 号：TM836[电气工程—高电压与绝缘技术]