薄膜热电偶瞬态温度传感器Al_2O_3绝缘膜制备工艺及性能表征  

The preparation and characterization of insulative Al_2O_3 film for the film thermocouple transient temperature sensor

作　　者：崔云先[1] 郭立明[1] 盛晓幸[1] 丁万昱[2] 安阳[1] 赵家慧[1] 

机构地区：[1]大连交通大学机械工程学院,辽宁大连116028 [2]大连交通大学材料科学与工程学院,辽宁大连116028

出　　处：《功能材料》2014年第7期7139-7142,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51102030);辽宁省自然科学基金资助项目(201202024)

摘　　要：制备绝缘性能良好的Al2O3薄膜是研制薄膜热电偶瞬态温度传感器的关键技术之一。针对直流脉冲磁控溅射制备的Al2O3绝缘薄膜总是存在针孔等缺陷,提出了利用直流脉冲磁控溅射加射频偏压技术成功制备了薄膜热电偶瞬态温度测试传感器的Al2O3绝缘薄膜。通过台阶仪、高阻计、扫描电子显微镜和划痕试验仪对Al2O3绝缘膜的成膜厚度、绝缘性、表面形貌及膜基结合力进行了观测,结果表明,制备的Al2O3绝缘膜厚度可达2.4μm;其绝缘性可达2.6×109Ω;薄膜表面光滑,成膜均匀;Al∶O原子比近似为2∶3;与金属基体的结合力可达12N。提供了一种制备高致密、高绝缘性能Al2O3薄膜的简单有效的方法,为制备瞬态温度传感器提供了技术保障。The preparation of the high insulativity of Al2 O 3 film was one of key technologies of film thermocouple transient temperature sensor.The flaws such as pinhole always exist on the Al2 O 3 film prepared by direct cur-rent （DC）pulsed magnetron sputtering.The Al2 O 3 insulating film for film thermocouple transient temperature testing sensor was prepared by DC pulsed magnetron sputtering adding RF bias.The measurements for the thickness,insulativity,surface morphology and membrane adhesion of the Al2 O 3 film are operated through the steps,megger,scanning electron microscopy and scratch tester.The results show that the film is uniform,and the surface was smooth.The thickness of Al2 O 3 film prepared with 9 h by DC pulsed magnetron sputtering adding RF bias was 2.4 μm.The insulation was 2.6 ＆#215; 10 9 Ω.The atom ratio of n （Al）/n （O）was 2 ∶3 for all samples.The binding force with the metal substrate was 12 N.This article provides a kind of simple and effec-tive method to preparate Al2 O 3 films,presenting high density,high insulation performance,which provides the technical support for the preparation of the transient temperature sensor.

关 键 词：Al2O3绝缘膜 薄膜热电偶 性能表征 射频偏压 

分 类 号：TH811[机械工程—仪器科学与技术]