具备高存储密度的新型NAND设备管理方案  

New NAND device management solution with high storage density

作　　者：卫兵[1] 郭玉堂[1] 宋杰[2] 张磊[3] 

机构地区：[1]合肥师范学院计算机科学与技术系,合肥230601 [2]安徽大学计算机科学与技术学院,合肥230039 [3]计算智能与信号处理教育部重点实验室(安徽大学),合肥230039

出　　处：《计算机应用》2014年第8期2434-2437,共4页journal of Computer Applications

基　　金：安徽省高校省级自然科学研究重点项目(KJ2013A217);安徽省优秀青年人才基金资助项目(2011SQRL020ZD)

摘　　要：针对嵌入式系统中NAND设备存储密度较低的问题,提出一种高存储密度的新型设备管理方案。通过研究大量NAND存储结构和BCH校验编码设计,在页面中找到一种通用的信息存储结构模式。使得冗余区(OOD)编码满足错误纠正码(ECC)纠错能力的同时可容纳设备分区管理信息,从而将主页面全部用于数据存储,并以此为基础进行了设备读写、损益均衡机制的设计。实验结果表明,所提方案中NAND设备数据存储密度可达98%,优于当前多数主流文件系统。该方案具备很高的数据存储密度,设备读写效率和擦写寿命相对稳定,在嵌入式系统平台中具备很好的应用优势。Focused on the problem of low storage density in embedded systems, in this paper, a new NAND device management solution with high storage density was proposed. In the proposed solution, a generalized mode of information structure in NAND page was designed by researching a great number of NAND storage structures and BCH（Bose-Chaudhuri-Hocquenghem） parity coding programs. In the mode, data layout in Out of Band （OOB） could achieve Error Correcting Code （ECC） capability while accommodating device management information of partition, thus the main page could be completely used for data storage, which can be treated as a basis for development of device read-write solution and Wear Leveling mechanism. The experimental results show that the proposed solution improves storage density up to 98%, and it is superior to most current common file systems. Having an excellent data storage density, as well as relatively stable device read-write efficiency and Program/Erase （P/E） endurance, the solution has good application advantages in embedded systems.

关 键 词：NAND 错误纠正码 存储密度 设备管理 损益均衡 

分 类 号：TP302.1[自动化与计算机技术—计算机系统结构] TP302.7[自动化与计算机技术—计算机科学与技术]