新原理光电探测阵列的微光响应测试研究  

Test study on weak-light level response for new quantum effect photo-detector array

作　　者：刘晓艳[1] 王明甲[1] 郭方敏[1] 

机构地区：[1]华东师范大学教育部极化材料与器件实验室,上海200241

出　　处：《红外与激光工程》2014年第8期2546-2551,共6页Infrared and Laser Engineering

基　　金：国家科技部重大科研项目(2006CB932802;2011CB932903);上海市科委配套(078014194;118014546)

摘　　要：针对暗电流低、灵敏度高等优点的新原理量子效应光电探测器,设计和加工了增益可调CTIA读出电路,以获得宽动态范围读出。读出电路芯片与1×64元量子效应光电探测器集成封装,在室温(300K)条件下进行读出测试研究。光源采用633nmHe-Ne激光器,直径50μm光斑聚焦照射。测试结果表明:器件偏压为-0.1V,激光功率150pW,积分时间78μs,响应电压55mV,电压响应率达到3.67E+08V/W。根据测试结果,提出了进一步降低暗电流影响的改进测试方案。For new quantum effects photo-detector array which has small dark current and high sensitivity, a gain adjustable readout circuit based on CTIA structure and sampling and holding circuit with correlated double sampling （CDS） technique was designed and fabricated in order to obtain a application of wide dynamic range. The 633 nm laser beam with radiation intensity tunable which is calibrated by a power meter shoots on the photo-detector cell one by one with a 50 m diameter facula. The test results show that the readout response voltage can reach to 55 mV and responsivity 3.67E＋08VAV when biased voltage up to -3 V and radiation intensity 150 pW at 300 K and integration time 78 txs. The test system is improved to reduce dark current further.

关 键 词：微光读出 量子效应器件 高灵敏度 增益可调读出电路 暗电流 

分 类 号：TN4[电子电信—微电子学与固体电子学] TN215