纳米TiN修饰平面微电极阵列在神经信息双模检测中的应用  

Application of Planar Microelectrode Array Modified by Nano-structure Titanium Nitride on Dual Mode Neural Information Recording

作　　者：蒋庭君[1,2] 刘春秀[1] 宋轶琳[1] 徐声伟[1] 蔚文婧 蔡新霞[1,2] 

机构地区：[1]中国科学院电子学研究所传感技术联合国家重点实验室,北京100190 [2]中国科学院大学,北京100190

出　　处：《分析化学》2014年第8期1071-1076,共6页Chinese Journal of Analytical Chemistry

基　　金：国家重点基础研究发展计划(Nos.2011CB933202;2014CB744605);国家自然科学基金项目(Nos.61125105;61271147;61101048);北京市科技计划项目(No.Z141100000214002;Z141102003414014)资助课题~~

摘　　要：采用氮化钛（TiN）修饰平面微电极阵列（pMEA）,对其性能进行改进,开展了离体神经电生理和神经递质电化学的检测研究。采用磁控溅射法在实验室自制微电极阵列上修饰具有纳米结构的TiN材料,修饰后的微电极阻抗降低近一个数量级,背景噪声基线降至±6μV,信噪比是修饰前的1.7倍。在SD大鼠离体脑片神经电生理信号检测中,信噪比可达10∶1,能分离提取±12μV的微弱信号。神经递质多巴胺电化学信号检测下限达50 nmol/L（信噪比2∶1）,浓度在0.05~100μmol/L内与电流响应的线性相关系数为0.998。实验结果表明,在微电极表面修饰纳米TiN,降低了微电极阻抗,提高了信噪比,实现了对神经信息微弱信号的检测。The nano-structure TiN was modified on the laboratory self-made planar microelectrode array pMEA by magnetron sputtering method. The performance of modified pMEA was investigated. Research on neuroelectrical and neurochemical recording was studied in vitro. The impedance of the modified pMEA was decreased almost one order of magnitude, and the background noise level was reduced to ＆#177;6 μV. In the same testing environment, the signal-to-noise ratio （SNR） of modified electrodes was 1. 7 times of bare electrodes. The SNR of neuroelectrical recording on the brain slice of SD rats reached 10：1 , and the weak signal such as ＆#177;12 μV was separated easily. For neuroelectrical recordings, the detection limit of dopamine （ DA） solution reached 50 nmol/L with the 2：1 （S/N）. During the concentration range of 0. 05-100 μmol/L, the linearly correlation coefficient of the DA oxidation currents was 0 . 998 . The modification of nano-structure TiN on pMEA reduced pMEA impedance and background noise level, meanwhile the SNR was increased. The weak signals of neuroelectrical and neurochemical recording were successfully recorded.

关 键 词：微电极阵列 氮化钛修饰 神经电生理 神经电化学 多巴胺 

分 类 号：R741[医药卫生—神经病学与精神病学] O657.1[医药卫生—临床医学]