石墨烯场效应晶体管研究进展  

Research Progress of Graphene-based Field Effect Transistors

作　　者：杨正龙[1] 刘芯岩 卜弋龙[1] 徐晓黎[1] 刘永生[2] 

机构地区：[1]同济大学材料科学与工程学院,先进土木工程材料教育部重点实验室,上海200092 [2]上海电力学院太阳能研究所,上海200090

出　　处：《固体电子学研究与进展》2014年第4期345-349,共5页Research & Progress of SSE

基　　金：国家高技术研究发展计划资助项目(2012AA030303);国家自然科学基金资助项目(11374204);上海市科委基础研究重点资助项目(12JC1408600;12JC1404400);上海市"曙光计划"项目(No.13SG52);同济大学大型仪器设备开放测试基金资助项目(2012014)

摘　　要：制备场效应晶体管的石墨烯主要分三种类型:大面积单层石墨烯、石墨烯纳米带和双层石墨烯片。文中介绍了这三类石墨烯场效应晶体管器件的研究进展和标志性成果,探讨了石墨烯对于场效应晶体管的影响。研究认为:与大面积单层石墨烯晶体管相比,由石墨烯纳米带制得的石墨烯场效应晶体管的开关比和电流密度等性能能够大幅度提升,可应用于逻辑电路;与大面积单层石墨烯和石墨烯纳米带相比,双层石墨烯晶体管具有更高的开关比,因此其实际应用的潜力最大。Graphene -based field effect transistors （FET） are mainly divided into three types, i.e. large-area monolayer graphene, graphene nanoribbons and bilayer graphene sheets. In this review, a comprehensive summary is provided for such three types of graphene-based FET during the last eight years. The impact of graphene on the electronic industry is also discussed in detail, and it is found that compared with large-area graphene, the graphene nanoribbons based FET has better on / off current ratio and current density, and it can be used for logic circuit, and that compared with large-area graphene and graphene nanoribbons, bilayer graphene-based FET has the highest on / off current ratio, and it offers perhaps the greatest practical potential for graphene-based field effect transistors.

关 键 词：石墨烯 场效应晶体管 大面积单层石墨烯 石墨烯纳米带 双层石墨烯片 

分 类 号：TN304.1[电子电信—物理电子学] O613.7[理学—无机化学]