砷化镓PHEMT功率管高温加速寿命试验研究  

Study on High Temperature Accelerated Life Testing of GaAs PHEMT

作　　者：贾东铭[1] 杨洋[1] 林罡[1] 金毓铨[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2014年第4期371-376,共6页Research & Progress of SSE

摘　　要：通过解决温度提升、温度稳定控制、寄生振荡抑制等关键问题,使砷化镓PHEMT功率器件的高温加速寿命试验得以实施。经过2 832h试验,三个分组的样品均出现了失效。对样品的失效模式与机理进行了分析,并确定了失效原因。对试验数据进行分析得到了该器件的寿命分布与寿命加速特性,并对分析结论进行了验证。With the key problems of temperature rise, temperature stability control and oscil- lation suppression being solved, the high temperature accelerated life testing of GaAs PHEMT power device could be implemented. After 2 832 hours of testing, the samples divided into three groups all failed. Based on the failure mode and mechanism, the failure reason was found. The lifetime distribution and the characteristics of life acceleration were obtained by analyzing the tes- ting data. In the end, the conclusions were verified.

关 键 词：砷化镓 微波功率管 平均失效前时间 

分 类 号：TN386[电子电信—物理电子学]